| 1 |
Confirmed experience of the manufacturer with the development of a board or a radiofrequency (or
hyperfrequency) function with good feedback from operations about the reliability of the function
produced. |
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| 2 |
Presence of protections against disconnection of antennas around RF and HF amplifiers and power transistors. |
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| 3 |
Presence of protections for EMC compatibility (check on out of band) around RF and HF amplifiers and power transistors. For example circulator, filter, etc. |
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| 4 |
Presence of protections against mismatch of load around RF and HF amplifiers and power transistors. For example, circulator, isolator, filter, etc. |
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| 5 |
Presence of protections against temperature overstresses around RF and HF amplifiers and power transistors. |
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| 6 |
Application of a formal method for taking account of thermal characteristics of the hyperfrequency function in the application. |
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| 7 |
Application of a formal method for validating the robustness of the circuit in its working environment (demonstrated margins from RF excursions, thermal overstress, compression, etc.). |
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| 8 |
Application of a formal method for taking account of specific features for transferring hyper frequency components in the manufacturing chain due to specific features of cases. |
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